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Dimerization induced incorporation nonlinearities in GaAsP (1994)

Cunningham, J. E. ; Santos, M. B. ; Goossen, K. W. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 64 (1994), S. 2418-2420

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We find that the incorporation of As and P into GaAs1−yPy, when using gas-source molecular beam epitaxy, does not depend linearly upon the atomic fluxes within the reactor. Rather, incorporation of As and P into GaAsP goes as the square of the atomic fluxes, i.e., y=fP2/(fP2+βfAs2),where fP(As) is the flux of P(As). β is a fitting parameter and that differs for relaxed and strained GaAsP. The deviation in y from a linear model [y=fP/(fP+fAs)] is as high as a factor of two, whereas our quadratic model is never more than a few percent off. We interpret this as due to surface pairing between two like species (dimerization) in order for them to incorporate into the crystal.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.111586

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