Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 2552-2554
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An array of AlGaAs/GaAs edge quantum wires (EQWIs) with an effective width of 80 nm was successfully prepared on a (111)B microfacet structure on a patterned substrate by molecular beam epitaxy. By forming a gate electrode on the wires, field effect transistor action has been successfully demonstrated. The conductance of the wire measured in magnetic fields has exhibited a clear Shubnikov–de Haas (SdH) oscillation, and its Landau plot shows a characteristic nonlinearity caused by the magnetic depopulation of one-dimensional (1D) subbands. It has been found that as the gate voltage decreases, the SdH peaks shift systematically toward lower magnetic fields, indicating a successful modulation of 1D electron density in the EQWI.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111571
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