Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 3288-3290
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
This study demonstrates the presence of a negative electron affinity (NEA) surface on AlN was grown on α(6H)-SiC. Heteroepitaxial AlN was grown on α(6H)-SiC(0001) substrates by molecular beam epitaxy techniques. The surface electronic states were characterized by ultraviolet photoemission obtained at surface normal. The observation of a sharp spectral feature at the lowest energy of the emitted electrons is an indication of a surface with a negative electron affinity. In addition, the trend of the NEA feature was examined as a function of annealing. The surface Fermi level is found to be near the middle of the AlN gap, and a possible band alignment between the AlN and SiC is presented.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111312
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