ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
After oxidation promoted by gamma-ray irradiation, in the photoluminescence (PL) spectra of Sm doped porous silicon (PS), there are three sharp peaks, superimposed on a broad band, with wavelengths near to those of the Sm doped SiO2 [R. Morimo, T. Mizushima, and H. Okumura, J. Electrochem. Soc. 137, 2340 (1990)]. The experimental results indicate that Sm-related luminescence centers can be created within the oxide of porous silicon, and only in porous silicon with high porosity can the Sm-related luminescence be found in the SiO2 layer. This experimental result can be explained by the fact that the excitation of electron-hole pairs occurs in nanoscale silicon, and the recombination occurs at the Sm-related luminescence centers in SiO2 layers covering nanoscale silicon.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111310
