ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The intermixing process of ultrathin InAs/InP strained quantum well structures by thermal annealing at 730–830 °C is investigated by photoluminescence measurements. Analyzing the results using a microscopic model, the interdiffusion process is characterized by an activation energy close to 3.8±0.2 eV, leading to an interdiffusion coefficient close to 7±0.5×10−17 cm2/s at 830 °C.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113090