Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 180-182
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thin films of amorphous Al2O3, about 280 nm thick, with Fe-cation concentrations of 0–4 at. % were deposited onto alpha-alumina [0001] substrates. Epitaxial regrowth of the thin films was found to occur during a postannealing process at temperatures of 950 and 1400 °C. The regrowth quality was determined by Rutherford backscattering spectrometry and ion channeling measurements. Perfect regrowth was found in the undoped samples after annealing at 1400 °C with a minimum backscattering yield of 2% in the Al sublattice. Furthermore, ion channeling angular scans revealed that Fe dopants occupied the substitutional sites of Al sublattice upon thermal anneal. This simple method of incorporating dopants into single-crystal alumina has potential in the fabrications of thin-film planar optical waveguides.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112665
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