Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 3096-3098
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
New quasi-one-dimensional quantum electron states are proposed in modulation-doped n-AlxGa1−xAs/u-GaAs heterostructures with periodic interface bending. Unlike usual flat heterointerfaces, the investigated system is sawtooth corrugated by bendings with a period of about 850 A(ring) and a bending angle 90°. Quantum-mechanical simulations yield energy spectrum with a single level below the Fermi energy. The probability distribution of electrons shows formation of a densely packed quasi-one-dimensional electron gas in the convex corner of the GaAs region. The ground level is as high as 100 meV above the deepest bottom of the conduction band potential and the excited state is separated by a significant energy gap of 16 meV. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112448
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