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Relaxation of InGaAs layers grown on (111)B GaAs (1994)

Sacedón, A. ; Calle, F. ; Alvarez, A. L. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 65 (1994), S. 3212-3214

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The relaxation behavior of InGaAs layers grown by molecular beam epitaxy on (111)B GaAs is investigated and compared with simultaneously grown (100) reference samples. Surface morphology, defect microstructure, and optical quality of the layers during the relaxation process are studied by Nomarski interference contrast, transmission electron microscopy, low-temperature photoluminescence, and Raman spectroscopy. These techniques reveal an inhomogeneous and anisotropic relaxation in (111) samples. In (111) samples, the increase of critical thickness and the slower relaxation dependence on thickness, as compared with the (100) reference samples, is discussed © 1994 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.112415

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