Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 3329-3331
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have studied the influence of interface roughness scattering on the mobility of two-dimensional electron gas (2DEG) in GaAs–AlGaAs modulation-doped heterostructures (MDH) both experimentally and theoretically. When the background ionized impurity concentration in the GaAs layer is smaller than 2.5×1015 cm−3, our investigation shows that interface roughness scattering is the dominant scattering mechanism in the high 2DEG density (Ns≥5×1011 cm−2) GaAs–AlGaAs MDH. We also demonstrate that interface roughness scattering is about an order of magnitude stronger than alloy disorder scattering in GaAs–AlGaAs MDH if the AlGaAs/GaAs interface fluctuation is only one monolayer of GaAs. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112382
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