Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 860-862
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Complete μc-Si:H p-i-n solar cells have been prepared by the very high frequency glow discharge method. Up to now, intrinsic μc-Si:H has never attracted much attention as a photovoltaic active material. However, an efficiency of 4.6% and remarkably high short circuit current densities of up to 21.9 mA/cm2 due to an enhanced absorption in the near-infrared could be obtained. First light-soaking experiments indicate no degradation for the entirely μc-Si:H cells. Voltage-dependent spectral response measurements suggest that the carrier transport in complete μc-Si:H p-i-n cells may possibly be cosupported by diffusion (in addition to drift).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112183
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