ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Backside secondary ion mass spectroscopy is used to examine elemental redistribution in Zn or Cd implanted Pd/Ge contacts to p-InGaAs. A quaternary Pd-In-Ga-As layer is observed at annealing temperatures of 200–250 °C. At temperatures (approximately-greater-than)250 °C, this layer disappears due to PdGe formation and InGaAs regrowth. Excess Ge diffuses to the contact interface. Cd and Zn accumulate inside the regrown InGaAs creating a thin, highly doped layer. Due to its abrupt interface and the formation of a highly doped layer beneath the contact, this implanted Pd/Ge contact scheme is a promising candidate for shallow ohmic contacts to p-InGaAs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112137