Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 1325-1327
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A procedure to pattern thin metal films on a nanometer scale with a scanning tunneling microscope (STM) operating in air is reported. A 30 nm film of hydrogenated amorphous silicon (a-Si:H) is deposited on a 10 nm film of TaIr. Applying a negative voltage between the STM tip and the a-Si:H film causes the local oxidation of a-Si:H. The oxide which is formed is used as a mask to wet etch the not-oxidized a-Si:H and subsequently, the remaining pattern is transferred into the metal film by Ar ion milling. Metal wires as narrow as 40 nm have been fabricated. Since a-Si:H can be deposited in very thin layers on almost any substrate, the presented procedure can be applied to structure all kind of thin films on a nanometer scale. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113230
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