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Femtosecond optical absorption measurements of electron-phonon scattering in GaAs quantum wells (1995)

Turner, K. ; Rota, L. ; Taylor, R. A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 3188-3190

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We present a combined experimental and theoretical investigation of intra- and intersubband carrier relaxation in GaAs/AlAs quantum wells following femtosecond laser excitation at low density. Time-resolved optical absorption has been measured using 125 fs pulses from a tunable Ti:sapphire laser which allows carriers to be excited preferentially into different subbands. The experiments have been analyzed using a multi-subband Monte Carlo simulation which contains all the important scattering mechanisms. Electron-phonon scattering rates obtained from dielectric continuum theory have been used, and we find excellent agreement with the experiment. The dominance of interface phonons in intrasubband relaxation is confirmed. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.113718

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