ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Intersubband lasing lifetimes of SiGe/Si and GaAs/AlGaAs multiple quantum well structures (1995)

Sun, G. ; Friedman, L. ; Soref, R. A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 3425-3427

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The feasibility of population inversion is studied for the SiGe/Si system and compared with that of GaAs/AlGaAs. Because of the absence of strong polar optical phonon scattering in SiGe/Si, the lifetime difference of the upper and lower lasing levels, to which the population inversion and laser gain are proportional, is consistently an order of magnitude larger than that of GaAs/AlGaAs; nor does it show the sudden drop to zero or negative values when the lasing energy exceeds the optical phonon energy. Both systems studied are superlattices, each period of which consists of three coupled quantum wells and barriers. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.113375

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit