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Ultrafast photodetector materials based on oxygen-doped metalorganic vapor phase epitaxy GaAs (1995)

Frankel, Michael Y. ; Huang, J.-W. ; Kuech, T. F.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 634-636

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Controlled incorporation of deep level states into III/V materials tailor their electrical and optical characteristics for ultrafast optoelectronics. We investigate the photoinjected carrier dynamics in GaAs grown by metalorganic vapor phase epitaxy (MOVPE) with (C2H5)2AlOC2H5 as an oxygen precursor providing the deep level state control. Photoconductor switching was used to determine the free-carrier trapping times, and femtosecond photoreflectance at 2 eV was used to measure the trapped charge recombination time as a function of oxygen concentration. We also use electro-optic sampling to demonstrate a photodetector with 650-fs measured response time and to show the material applicability to ultrafast optoelectronics. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.114143

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