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Transport study of self-supporting porous silicon (1995)

Fejfar, A. ; Pelant, I. ; Šípek, E. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 1098-1100

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have measured dark DC conductivity and time-of-flight (TOF) of carriers in self-supporting porous silicon films in the temperature range 298–480 K. The dark I-V curves show superlinear behavior with activation energies of 0.38–0.67 eV. The TOF measurements allowed us to evaluate the drift-length of non-equilibrium carriers and revealed a significant decrease of the collected charge with increasing delay (tdel≥1 ms) of the exciting 3 ns laser pulse after the voltage application, probably due to field redistribution in the Si crystallites. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.113584

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