Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 1080-1082
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The growth of highly strained InxGa1−xAs (x(approximately-greater-than)0.25) epilayer on GaAs (001) undergoes a two-dimensional–three-dimensional (2D-3D) growth mode transition beyond a critical thickness which depends on the strain. We show that the growth mode is controlled by the island-edge diffusion carrier which originates from elastic energy relaxation at the edge of 2D island. The 2D-3D growth mode transition depends upon whether or not a new layer nucleates on top of the island of 2 ML height before coalescence. The In atoms on the surface arising from surface segregation affect the island-edge diffusion barrier and nucleation, leading to a 3D growth mode at the critical thickness. The experimental investigation is explained satisfactorily. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113578
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