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Ideal hydrogen termination of Si(001) surface by wet-chemical preparation (1995)

Morita, Yukinori ; Tokumoto, Hiroshi

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 2654-2656

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A nearly ideal Si(001) surface was prepared by a wet-chemical method with a solution of HF:HCl=1:19 (pH〈1). The surface was examined by scanning tunneling microscopy and was found to be covered by the uniform dihydride phase. Its successful preparation was the direct consequence of the following facts: The suppression of the (111) facet formation due to a low concentration of OH ions in the etchant solution and the stabilization of the surfaces structure due to the formation of the ordered steps. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.114326

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