ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Highly conducting p-type ZnSe and ZnSSe were fabricated by simple N2 gas doping during molecular beam epitaxial growth without the use of any activation method, such as discharge and cracking. p-type conduction in the N2-gas doped ZnSe is produced by a shallow N acceptor state, which is obtained only when the dopant N2 pressure is higher than 10−5 Torr. When the N2 pressure was varied from 3.2×10−5 to 1×10−4 Torr, the net acceptor concentration of N2-gas doped ZnSe and ZnS0.06Se0.94 films ranged from 3×1015 to 2×1017 cm−3 and from 1×1016 to 2.5×1017 cm−3, respectively. Light emitting diodes with a N2-gas doped p-cladding layer were fabricated and tested. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114779