Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 2986-2988
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The structural properties of low temperature plasma enhanced chemical vapor deposited SiO2 films using Si2H6 and N 2O have been studied. It is observed that the degree of compaction of as-deposited SiO2 films, upon subsequent annealing, increases up to 4%. The shift of Si-O-Si stretching peak wave number of the as-deposited SiO 2 films (Δω=−20 cm−1) compared to the undensified SiO 2 films is attributed to 9.4% increase in the film density, resulting in smaller Si-O-Si bridging bond angle of 138°. It is also believed that the high temperature annealing results in the reduction of hydroxyl containing species in the film and in turn drives the dielectric constant towards that of thermal SiO2 films. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114834
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