Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 3292-3294
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Delayed photocurrents were observed in GaAs/AlAs type-I short-period superlattices by measuring time-resolved photoresponses under ultrashort optical pulse excitation. According to the envelope function calculations, the X1 state in AlAs barriers resonates with the Γ2 state in the adjacent GaAs wells at a bias voltage where the delayed photocurrents were conspicuous. These results strongly suggest that the dynamic carrier transport process is significantly influenced by X1-Γ2 resonance effects in the superlattices. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115224
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