ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Nitrogen doping during atomic layer epitaxial growth of ZnSe (1995)

Zhu, Z. ; Horsburgh, G. ; Thompson, P. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 3927-3929

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: This letter reports the growth and characterization of ZnSe:N layers by atomic layer epitaxy (ALE) using a nitrogen rf-plasma source. The ALE-grown ZnSe:N layers have been investigated in terms of in situ reflection high electron energy diffraction and ex situ capacitance–voltage profiling and photoluminescence spectroscopy. The net acceptor concentration in the ALE-grown layer has been obtained as high as 1.2×1018 cm−3 and the ALE layers of ZnSe:N show reduced number of compensating deep centers compared with the ZnSe:N grown by molecular beam epitaxy. The effects of the Fermi level at a growing surface on the generation of compensating donors with a binding energy of 57 meV are also discussed. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.114407

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit