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Phonons in self-assembled (In,Ga,Al)Sb quantum dots (1996)

Bennett, Brian R. ; Shanabrook, B. V. ; Magno, R.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 958-960

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Quantum dots of InSb, GaSb, and AlSb were grown on GaAs substrates by molecular beam epitaxy and characterized by atomic force microscopy and Raman spectroscopy. There is a clear correlation between the observation of quantum dots by atomic force microscopy and a phonon mode at an energy a few wavenumbers below the longitudinal optic phonon energy for thick (In,Ga,Al)Sb layers. In the case of nominally AlSb quantum dots, a two-mode behavior is observed and attributed to the segregation of Ga into the AlSb during growth. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.116111

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