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Reduction of threading dislocation density in InP-on-Si heteroepitaxy with strained short-period superlattices (1996)

Samonji, K. ; Yonezu, H. ; Takagi, Y. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 100-102

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We applied multistrained short-period superlattices (SSPSs) and GaP buffer layers to the InP-on-Si heteroepitaxy, in order to suppress the generation of threading dislocations. As a result, it was found that the density of threading dislocations in an InP/SSPSs/GaAs/SSPSs/GaP/Si structure including (InAs)m(GaAs)n SSPSs and (GaAs)i(GaP)j SSPSs was remarkably reduced, compared with that in the InP/GaP/Si structure. Misfit dislocations lying along the 〈011〉 directions were observed at heterointerfaces in the InP/SSPSs/GaAs/SSPSs/GaP/Si structure. Therefore, the lattice mismatch strain was stepwise accommodated by the generation of misfit dislocations at the heterointerfaces. From these results, it was clarified that multi-SSPSs are effective for reducing the density of threading dislocations in heteroepitaxy with a large lattice mismatch. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.118087

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