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Universal curves for optical power degradation of II–VI light-emitting diodes (1996)

Chuang, S. L. ; Ukita, M. ; Kijima, S. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 1588-1590

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We propose a transient recombination-enhanced defect-generation model to analyze the degradation of optical output powers of blue-green II–VI light-emitting diodes (LEDs). We find an analytical solution and discover a set of universal curves for the time dependence of optical output power, which agree very well with the experimental data for strained CdZnSe quantum-well structures. Our model shows that the optical power can be non-exponential in character and its long-time behavior has a 1/t dependence. This 1/t dependence is also related to the growth of the defect density, which should behave as a t1/2 dependence. The generation of new defects due to electron-hole recombination at the defect sites is found to be the dominant degradation mechanism for II–VI LEDs. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.117039

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