ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
InGaN multi-quantum well (MQW) structure laser diodes (LDs) with various different cavity lengths were fabricated on sapphire substrates with (112¯0) orientation (A face). The external differential quantum efficiency was obtained as a function of the cavity length. An internal quantum efficiency of 86%, an intrinsic loss of 54 cm−1 and a threshold gain of 110 cm−1 were obtained. Measuring the pulse response of the LDs, a carrier lifetime of 2.5 ns was obtained. A threshold carrier density was calculated as 1.3×1019/cm3. The emission wavelength of the LDs was around 406 nm. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117032