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Highly tetrahedral amorphous carbon films with low stress (1996)

Chhowalla, M. ; Yin, Y. ; Amaratunga, G. A. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 2344-2346

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have deposited boronated highly tetrahedral amorphous carbon (ta-C:B) films with low stress using a filtered cathodic vacuum arc. The sp3 fraction, hardness, and resistivity were measured as a function of the ion energy and were found to reach a maximum above 50 eV for B concentrations of 2% and 4%. The most significant result we found was that highly tetrahedral a-C:B film (sp3≈80%) with low stress (1–3 GPa) with B concentrations up to 4% could be obtained. The B in the films was found to be predominantly (≈75%) sp2 bonded. Additionally, the stress in the films did not vary with the ion energy or sp3 fraction unlike in regular ta-C films. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.117519

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