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Type conversion in irradiated silicon diodes (1997)

Taylor, Stephen J. ; Yamaguchi, Masafumi ; Yang, Ming-Ju ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 70 (1997), S. 2165-2167

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have observed conversion from p- to n-type of the base layer of n+(backward-slash)p(backward-slash)p+ silicon diodes irradiated with more than roughly 5×1016 cm−2 1 MeV electrons. Annealing for 15 min at 200 °C results in a recovery of p-type conduction in diodes in which type conversion had been induced. Solar cells which employ the same diode structure are severely degraded by irradiation with more than 1016 cm−2 1 MeV electrons and show only a weak infrared response after irradiation with 1017 cm−2 1 MeV electrons, consistent with the creation of an n+(backward-slash)n(backward-slash)p structure due to type conversion. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.118946

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