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Dielectric-base transistors with doped channel (1997)

Hato, Tsunehiro ; Yoshida, Akira ; Yoshida, Chikako ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 70 (1997), S. 2900-2902

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The dielectric-base transistor (DBT) is expected to be coupled with various functional oxides such as high-temperature superconductors and ferroelectrics. We experimented with lowering the conduction band of the channel to reduce the operating voltage. LaTiO3 deposited on SrTiO3 supplies carriers in the SrTiO3 substrate by displacing Sr2+ and La3+. With this technique, we fabricated a YBa2Cu3O7−x/In2O3/SrTiO3/LaTiO3/SrTiO3 transistor with a partially doped channel. The transistor operates at under 1 V while maintaining a voltage amplification factor of 2, which is one order smaller than the 15 V operating voltage of a transistor with an undoped channel. The base potential relative to the emitter conduction band has been reduced to 0.3 eV. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.119047

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