Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
70 (1997), S. 628-630
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Boron nitride films have been deposited on p-type silicon substrates by rf sputtering in the presence of an electron cyclotron resonance (ECR) plasma at a temperature of 450 °C. Structural phases were identified using IR spectroscopy and electrical characterization was carried out in the metal-insulator-semiconductor configuration. It was shown that the presence of ECR plasma enhanced the formation of cubic phase at substrate temperature as low as 450 °C, along with hexagonal phase. The dielectric constant was found to be 6–8 and the resistivity was about 1012 Ω cm. The capacitance-voltage characteristics indicated good electronic interface with the presence of ECR plasma, with the density of states of about 1.18×1012 eV−1 cm−2. The density of states was found to be higher by a factor of 2 in the absence of ECR plasma. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.118332
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