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Investigation of the early stages of ZnSe epitaxy on GaAs(001) via scanning tunneling microscopy (1997)

Ahsan, S. ; Kahn, A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 71 (1997), S. 2178-2180

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We present a scanning tunneling microscopy (STM) study of the initial stages of ZnSe deposition on the GaAs(001)-(2×4) surface. The deposition of elemental Se and of ZnSe on the bare GaAs surface induces considerable atomic disorder attributed to the Se–As exchange reaction. The deposition of elemental Zn weakens the 2× periodicity of the surface but induces no apparent changes in the STM images of the As dimers. Comparison of STM images of submonolayers of ZnSe on GaAs with and without a Zn pretreatment suggests that Zn reduces the interaction of Se with the GaAs surface. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.119373

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