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Planar aluminum-implanted 1400 V 4H silicon carbide p-n diodes with low on resistance (1997)

Peters, D. ; Schörner, R. ; Hölzlein, K.-H. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 71 (1997), S. 2996-2997

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Planar p-n diodes with edge termination were fabricated by aluminum implantation on n-type 4H silicon carbide. These diodes exhibited an excellent blocking behavior up to 1400 V reverse voltage with stable avalanche breakdown at an electric field strength of 2.8 MV/cm. In addition, a nearly classical forward characteristic was observed with both recombination and diffusion current mechanism represented by ideality factors of 1.05 and 1.93, respectively. The turn-on voltage was 2.8 V. At a forward voltage drop of 6.2 V a current density of 4000 A/cm2 and a differential on resistance below 1 mΩ cm2 were achieved. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.120241

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