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Far-infrared study of a laterally confined electron gas formed by molecular beam epitaxial regrowth on a patterned (100) n+-GaAs substrate (1997)

Arnone, D. D. ; Cina, S. ; Burroughes, J. H. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 71 (1997), S. 497-499

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A method of producing lateral confinement of an electron gas has been realized by using molecular beam epitaxy to grow a high mobility heterostructure on a (100) n+-GaAs layer selectively etched to create a two-dimensional array of cavities through the n+-GaAs, which are bound by higher index facets. Far-infrared cyclotron resonance (CR) spectra unambiguously demonstrate that the electron gas formed inside the cavities is confined in both lateral directions. Typical confinement energies of 30 cm−1 and widths of 2000 nm are derived from the spectra and magnetoresistance measurements. The effect of different n+-GaAs backgate biases is also investigated. Combining information from CR spectra with atomic force microscopy images provides a picture of the nature of the lateral confinement in this structure. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.119589

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