Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 97-99
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have observed differential reflection dynamics in In0.518Ga0.492As/InP multiple quantum wells, using the pump–probe technique, and examined the photoluminescence spectra to determine the interface quality for the samples studied. Our results show that the interface quality and well width of the quantum wells (QWs) strongly influence the differential reflection dynamics. The experimental results provide a direct evidence to demonstrate that photoexcited carrier diffusion in cap layer and barriers along the direction perpendicular to sample surface plays a dominant role in determining the differential reflection dynamics of the QWs. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120656
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