Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 28-30
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The annihilation of mobile protons in thin SiO2 films by capture of ultraviolet-excited electrons has been analyzed for temperatures between 77 and 500 K. We observe a strong increase in proton annihilation with increasing temperature, and derive an activation energy for electron capture of about 0.2 eV. Based on quantum chemical [(OH)3Si]2(Single Bond)O(Single Bond)H+ cluster calculations, we suggest photoexcitation of electrons from excited vibrational states of the ground electronic (valence band) state to a nearby excited electronic (SiO2 gap) state. It is argued that the latter excitation can result in H0 formation at elevated temperatures. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121447
|
Location |
Call Number |
Expected |
Availability |
