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Self-regulated growth of tilted superlattices by atomic layer epitaxy (1998)

Hartmann, J. M. ; Charleux, M.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 3151-3153

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report on a self-regulated method for the growth of tilted superlattices. It relies on the reconstructed surfaces alternatively stabilized during the atomic layer epitaxy (ALE) of compound semiconductors. The c(2×2)+(2×1) Cd-stabilized and the (2×1) Te-stabilized surfaces alternatively formed during the ALE of CdTe and CdMn(Mg)Te ensure a self-regulation of the growth at 0.5 monolayer deposited per ALE cycle for both CdTe and CdMn(Mg)Te. We are thus able to overcome the problem of precise flux control inherent to tilted superlattices. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.121576

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