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Influence of barrier height on scanning tunneling spectroscopy experimental and theoretical aspects (1998)

Stiévenard, D. ; Grandidier, B. ; Nys, J. P. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 569-571

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Scanning tunneling spectroscopy allows the determination of the density of states of the involved electrodes as well as the associated barrier height. We have measured the barrier height between tungsten tip and the GaAs (110) surface with a scanning tunneling microscope (STM) in ultrahigh vacuum. When the tunneling junction exhibited a low barrier height, we observed and explained an apparent widening of the GaAs gap which can mislead the real doping concentration of the sample. A theoretical model based on the self-consistent Keldysh–Green functions formalism is used to calculate the STM current. It shows a possible lowering of the barrier height according to the adsorption of As or Ga atoms on the apex of the tungsten tip. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.120762

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