Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 1066-1068
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Recombination in single quantum well and multiquantum well InGaN/GaN structures is studied using time-resolved photoluminescence and pulsed photoluminescence measurements. Room-temperature measurements show a rapid lifetime (0.06 ns) for a single quantum well structure, while an increasingly long decay lifetime is measured for multiquantum wells as more quantum wells are incorporated into the structure. Temperature-dependent lifetime measurements show that a nonradiative recombination mechanism activates above 45 K in the single quantum well but is less important in the multiquantum wells. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120966
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