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Magnetotransport study on the two-dimensional electron gas in AlGaN/GaN heterostructures (1998)

Wong, L. W. ; Cai, S. J. ; Li, R. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 73 (1998), S. 1391-1393

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have performed magnetotransport studies on AlGaN/GaN heterostructures at low temperature and magnetic field up to 30 T. The integer quantum Hall effect is observed in two-dimensional electron gas at the AlGaN/GaN interface. From the temperature dependence of the low-field Shubnikov–de Hass oscillations, a carrier effective mass of m*=0.228me is obtained. Dingle plots of our resistivity data show inhomogeneity in the two-dimensional electron gas. Finally, we found that for electronic density as high as 5.47×1012 cm−2, only the lowest subband in the quantum well is occupied. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.121954

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