Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 1346-1348
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We investigate the electron affinity of aluminum nitride surfaces prepared by nitrogen sputtering and annealing via x-ray, ultraviolet, and inverse photoemission spectroscopy. The combination of these techniques leads to a precise determination of the relative positions of the Fermi level, valence-band maximum, conduction-band minimum, and vacuum level at the semiconductor surface. We demonstrate that, in spite of the presence of a sharp photoemission onset feature previously associated with negative electron affinity, the electron affinity is clearly positive on these surfaces. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122158
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