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Suppressed diffusion of boron and carbon in carbon-rich silicon (1998)

Rücker, H. ; Heinemann, B. ; Röpke, W. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 73 (1998), S. 1682-1684

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Transient enhanced diffusion of boron in silicon can be suppressed by substitutional carbon. We show here that diffusion of boron and carbon is strongly reduced in carbon-rich silicon, even when no supersaturation of interstitials due to implantation is present. Pronounced non-Fickian diffusion behavior was found for epitaxially grown-in carbon at concentrations well above its solid solubility. The experimentally observed suppression of B and C diffusion at high C concentrations is explained in terms of a recently proposed model that predicts an undersaturation of Si self-interstitials caused by diffusion of C out of C-rich regions. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.122244

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