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Self-defined AlAs-oxide–current-aperture buried heterostructure vertical cavity surface-emitting laser (1998)

Choi, Won-Jin ; Dapkus, P. Daniel

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 73 (1998), S. 1661-1663

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We demonstrate a promising technique to fabricate self-defined AlAs-oxide–current-apertures for vertical cavity surface-emitting lasers (VCSELs). A self-defined AlAs-oxide–current-aperture buried heterostructure VCSEL was fabricated using a three-step growth sequence. The active region mesa size was 10 μm×10 μm. The lowest threshold current of the lasers was 0.7 mA under continuous-wave operation at room temperature. The differential quantum efficiency was 32%. The lasers operate at temperatures of up to 50 °C. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.122238

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