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Electrical properties of n-n ZnSe/In0.04Ga0.96As(001) heterojunctions (1998)

Cai, C. ; Nathan, M. I.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 73 (1998), S. 2033-2035

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Lattice-matched n-n ZnSe/In0.04Ga0.96As heterojunctions were studied by means of current density versus voltage (J–V) and capacitance versus voltage (C–V) measurements. The resulting characteristics indicate that the behavior of this n-n heterostructure can be explained by a back-to-back double Schottky diode model. The value of conduction band discontinuity (ΔEc) is found to be 0.10–0.12 eV. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.122560

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