Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 2152-2154
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Reflectance anisotropy spectroscopy is applied to submonolayer growth of In on the vicinal silicon (111) surface. Deposition in the region of 1 monolayer onto a clean stepped Si(111) surface at elevated temperature produces a single-domain In-induced (4×1) superstructure consisting of quasi-one-dimensional chains aligned parallel to the vicinal surface step edges. A significant optical anisotropy (1.65%), uncharacteristic of semiconductor systems, develops in the region of 1.9 eV which saturates upon completion of the (4×1) superstructure. We relate this feature to an optical transition involving a flat, highly populated filled surface state observed previously. We argue that the intensity and direction of this peak are indicative of electronic confinement within this system perpendicular to the In-induced chain length. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122407
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