Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 2334-2336
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have measured the photoluminescence (PL) decay properties of porous silicon (PS) samples subjected to ion irradiation up to a dose of 1015 cm−2 at 30 kV. It is found that while the PL intensity decreases down to 1/100 of the initial value due to induced nonradiative recombination centers, its decay constant is unchanged. This observation is inconsistent with the hypothesis that photoexcited carriers migrate among the Si nanocrystallites in PS. The results are compared with those of PS samples subjected to thermal annealing instead of ion irradiation, where the PL quenching in this case is accompanied by a large reduction in the decay constant. Infrared absorption spectra of ion-irradiated samples show essentially no chemical bonding change. In contrast, those of the annealed samples show loss of hydrogen bonding and increase of surface oxidation. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122453
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