Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 3088-3089
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Samples consisting of multi B delta layers and a single Sb delta layer, grown using molecular beam epitaxy, have been sputter depth profiled using O2+ ions with incidence energy of 8.2 or 3.2 keV. The leading and the trailing edge of the B distributions show an anomalous broadening induced by the sputtering, which apparently increases with ion energy. Similar feature is not observed for the Sb distribution. Incorporation of substitutional C to concentrations ∼1019 cm−3 suppresses the broadening feature almost completely. This anomalous broadening is interpreted as a consequence of injection of Si self-interstitials from the region damaged by the ion bombardment. These interstitials may migrate far beyond the mixing depth and interact with the B dopants, which yields a mixing of the B atoms before the distribution is within the "ordinary" mixing depth. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122681
|
Location |
Call Number |
Expected |
Availability |
