Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 3462-3464
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Zero-field electrical resistivity over the temperature range of 4–300 K and magnetoresistance in magnetic fields of up to 12 T have been measured in Gd5(Si1.8Ge2.2). This system undergoes a first-order magnetostructural transition at TC≅240 K, from a high-temperature paramagnetic to a low-temperature ferromagnetic phase, accompanied by a large drop in the resistivity. The application of an external magnetic field above TC can induce this transition, and a giant negative magnetoresistance effect (Δρ/ρ≅−20%) is observed associated with this first-order field-induced transition. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122797
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