ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Layers of Ga0.25In0.75P were grown on InP by metalorganic molecular beam epitaxy and studied by ion channeling and asymmetric high-resolution x-ray diffraction. The angular difference between the substrate and the layer channeling angles agreed with the corresponding angular difference calculated from the x-ray results. Negligible relaxation was found in Ga0.25In0.75P layers up to a thickness of 50 nm. Thicker layers were found to be partially relaxed. In the channeling experiments an additional minimum in the substrate angular scan profile at an angle corresponding roughly to the layer's minimum yield was found. This extra minimum was attributed to the steering effect at the strained GaInP/InP interface [S. Hashimoto, Y. Q. Feng, W M. Gibson, L. J. Schowalter, and B. D. Hunt, Nucl. Instrum. Methods B 13, 45 (1986)], and was confirmed by a comparison with the x-ray diffraction measurements. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123127
