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Local characterization of electronic transport in microcrystalline silicon thin films with submicron resolution (1999)

Rezek, B. ; Stuchlík, J. ; Fejfar, A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 74 (1999), S. 1475-1477

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Two-dimensional maps of dark conductivity with submicron resolution have been obtained on in situ prepared hydrogenated microcrystalline silicon (μc-Si:H) layers used for solar cells by atomic force microscopy with conductive cantilever. Comparison of the morphology and current image allows clear identification of Si crystallites. Pronounced current decrease has been detected at the grain boundaries. The technique was used to study initial stages of μc-Si:H growth, and we show how the incubation layer, detrimental for solar cells efficiency, can be minimized by pulsed excimer laser crystallization of the initial amorphous layer. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.123585

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