Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 3143-3145
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Effects of interfacial layer growth on reactively sputter-deposited TiO2 films were studied. Leakage current was reduced to 10−8 A/cm2 at +1 V after annealing in oxygen ambient and showed tunneling-like temperature dependence. As the interfacial layer grew, interface states and hysteresis were improved significantly. However, the reliability was degraded as the annealing temperature increased. © 1999 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.124089
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